As we come closer to 2017, more rumours fuel the speculative launch of Samsung’s Galaxy S8. Previously, the smartphone was rumoured to pack 6GB RAM and 256GB of internal storage. However, a new rumour coming from China’s popular leakster, Ice Universe, suggests that the Galaxy S8 is expected to feature 8GB RAM (made using 10nm fabrication technology) and a newer UFS 2.1 flash storage chip.
The same leakster goes on to say that the South Korean tech giant will start their own manufacturing of 8GB RAM memory using its 10nm technology. Moreover, an updated version of UFS 2.0 will include key improvements over earlier versions to provide a better data security through the use of in-line cryptography between the system-on-chip (SoC) and UFS storage device.
Previous reports have pointed towards how the speculated device will pack Qualcomm’s Snapdragon 835 processor and Samsung might even adopt the dual-lens camera set-up. There is a high possibility that the Galaxy S8 may feature a single rear-facing camera. Other reports suggest that the standard Galaxy S8 will feature a 5.1-inch curved display while the more premium version would boast a huge 6-inch curved screen with Quad HD (2560x1440pixels) resolution.
The only question that remains unanswered is how many Galaxy S8 variants will be unveiled at the MWC 2017 event in late February.